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Record Details

Record 31 of 53962
Cryogenic, Absolute, High Pressure Sensor
Offline Availability: Go to Request Form
Author and Affiliation:
Chapman, John J. [Inventor](NASA Langley Research Center, Hampton, VA United States)
Shams. Qamar A. [Inventor](NASA Langley Research Center, Hampton, VA United States)
Powers, William T. [Inventor](NASA Langley Research Center, Hampton, VA United States)
Abstract: A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
Publication Date: Jun 05, 2001
Document ID:
20010125617
(Acquired Dec 21, 2001)
Subject Category: INSTRUMENTATION AND PHOTOGRAPHY
Report/Patent Number: US-Patent-6,240,785, US-Patent-Appl-SN-778065, US-Patent-Appl-SN-681245, NASA-Case-LAR-15280-2-SB
Document Type: Patent
Financial Sponsor: NASA Langley Research Center; Hampton, VA United States
Organization Source: NASA Langley Research Center; Hampton, VA United States
Description: 8p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: CRYOGENIC TEMPERATURE; DETECTION; HIGH PRESSURE; PRESSURE SENSORS; ALUMINUM NITRIDES; DOPED CRYSTALS; PIEZOELECTRIC TRANSDUCERS; PRESSURE VESSELS; SILICON; SUBSTRATES; THERMAL EXPANSION; PATENTS
Miscellaneous Notes: Continuation of abandoned US-Patent-Appl-SN-681245, filed 22 Jul. 1996
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