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Cryogenic, Absolute, High Pressure SensorA pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
Document ID
20010125617
Acquisition Source
Langley Research Center
Document Type
Other - Patent
External Source(s)
LAR-15280-2-SB
Authors
John J Chapman
(Langley Research Center Hampton, United States)
Qamar A Shams
(Langley Research Center Hampton, United States)
William T Powers
(Langley Research Center Hampton, United States)
Date Acquired
August 20, 2013
Publication Date
June 5, 2001
Publication Information
Publisher: United States Patent and Trademark Office
Subject Category
Instrumentation And Photography
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-6,240,785
Patent Application
US-Patent-Appl-SN-778065|US-Patent-Appl-SN-681245
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