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Raman and FTIR Studies of Silicon Carbide Surface Damage from Palladium Implantation in Presence of HydrogenThe ion implantation in a crystal such as silicon carbide will cause both damage in the ion track and in the substrate at the end of the ion track. We used both keV, and MeV Pd ions in fabricating electronic chemical sensors in silicon carbide, which can operate at elevated temperatures. In order to study the feasibility of fabricating an optical chemical sensor (litmus sensor), we need to understand the optical behavior of the embedded damage in the presence of hydrogen, as well as the potential chemical interaction of silicon carbide broken lattice bonds with the hydrogen dissociated from gas by palladium. Implanted samples of silicon carbide were studied using both Raman spectroscopy and FTIR (Fourier Transform-Infrared). The results of this work will be presented during the meeting.
Document ID
20020018883
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Muntele, I.
(Alabama A & M Univ. Normal, AL United States)
Ila, D.
(Alabama A & M Univ. Normal, AL United States)
Muntele, C. J.
(Alabama A & M Univ. Normal, AL United States)
Poker, D. B.
(Alabama A & M Univ. Normal, AL United States)
Hensley, D. K.
(Alabama A & M Univ. Normal, AL United States)
Larkin, David
Date Acquired
August 20, 2013
Publication Date
November 1, 2001
Publication Information
Publication: HBCUs/OMUs Research Conference Agenda and Abstracts
Subject Category
Solid-State Physics
Report/Patent Number
P2
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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