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Future Development of Dense Ferroelectric Memories for Space ApplicationsThe availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.
Document ID
20020028816
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
Philpy, Stephen C.
(Celis Semiconductor Corp. Colorado Springs, CO United States)
Derbenwick, Gary F.
(Celis Semiconductor Corp. Colorado Springs, CO United States)
Date Acquired
August 20, 2013
Publication Date
November 1, 2001
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2001: Proceedings
Subject Category
Computer Operations And Hardware
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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