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A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin FilmsA novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.
Document ID
Document Type
Conference Paper
Liu, S. Q. (Houston Univ. TX United States)
Wu, N. J. (Houston Univ. TX United States)
Ignatiev, A. (Houston Univ. TX United States)
Date Acquired
August 20, 2013
Publication Date
November 1, 2001
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2001: Proceedings
Subject Category
Electronics and Electrical Engineering
Distribution Limits
Work of the US Gov. Public Use Permitted.

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IDRelationTitle20020028797Analytic PrimaryNon-Volatile Memory Technology Symposium 2001: Proceedings
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