Origin of the Bandgap Bowing in ZNSe(1-x)Te(x) Alloys

Photomodulated reflection and optical absorption spectroscopies were used to measure the composition and hydrostatic pressure dependencies of interband optical transitions in ZnSe(1-x)Te(x) alloys. On the Te-rich side, the bandgap reduction and the reduction in the pressure dependence of the bandgap are well explained by the band anticrossing interaction between the ZnTe conduction band states and the Se localized state located at 2.85 eV above the valence band top of ZnTe. On the Se-rich side, an interaction between the degenerate Gamma valence bands of ZnSe and the localized Te state located at 0.1 eV above the valence band top of ZnSe is proposed to generate the bandgap reduction and the rapid increase of the spin-orbit splitting with increasing Te concentration. A linear interpolation between these two models accounts for the composition and pressure dependencies of the bandgap in the entire composition range.