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Etch Profile Simulation Using Level Set MethodsEtching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.
Document ID
20020049815
Acquisition Source
Ames Research Center
Document Type
Abstract
Authors
Hwang, Helen H.
(NASA Ames Research Center Moffett Field, CA United States)
Meyyappan, Meyya
(NASA Ames Research Center Moffett Field, CA United States)
Arnold, James O.
Date Acquired
August 20, 2013
Publication Date
January 1, 1997
Subject Category
Engineering (General)
Meeting Information
Meeting: American Vacuum Society Conference
Location: San Jose, CA
Country: United States
Start Date: October 20, 1997
End Date: October 24, 1997
Sponsors: American Vacuum Society
Funding Number(s)
CONTRACT_GRANT: NAS2-14031
PROJECT: RTOP 632-30-34
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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