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Doping Scheme of Semiconducting Atomic ChainsAtomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.
Document ID
20020051648
Acquisition Source
Ames Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Toshishige, Yamada
(MRJ Technology Solutions, Inc. Moffett Field, CA United States)
Saini, Subhash
Date Acquired
August 20, 2013
Publication Date
January 1, 1998
Subject Category
Solid-State Physics
Funding Number(s)
PROJECT: RTOP 519-40-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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