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Record Details

Record 97 of 21025
Doping of Semiconducting Atomic Chains
Author and Affiliation:
Toshishige, Yamada(MRJ Technology Solutions, Inc., Moffett Field, CA United States)
Kutler, Paul [Technical Monitor]
Abstract: Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.
Publication Date: Jan 01, 1997
Document ID:
20020052393
(Acquired Jul 08, 2002)
Subject Category: ATOMIC AND MOLECULAR PHYSICS
Document Type: Preprint
Meeting Information: American Vacuum Society 44th National Symposium; 20-24 Oct. 1997; San Jose, CA; United States
Meeting Sponsor: American Vacuum Society; New York, NY United States
Contract/Grant/Task Num: NAS2-14303; RTOP 519-40-12
Financial Sponsor: NASA Ames Research Center; Moffett Field, CA United States
Organization Source: NASA Ames Research Center; Moffett Field, CA United States
MRJ Technology Solutions, Inc.; Moffett Field, CA United States
Description: 1p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: ATOMS; ELECTRICAL PROPERTIES; SEMICONDUCTORS (MATERIALS); ADDITIVES; PERIODIC VARIATIONS; REFLECTION; POSITION (LOCATION)
Availability Source: Other Sources
Availability Notes: Abstract Only
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