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Modeling and Simulation of Semiconductor Quantum Well Structures and LasersIn this talk I will cover two aspects of modeling and simulation efforts at NASA Ames Research Center. In the quantum well structure simulation, we typically start from the quantum mechanical calculation of the quantum well structures for the confined/and unconfined eigen states and functions. A bandstructure calculation of the k*p type is then performed for the confined valence states. This information is then used to computer the optical gain and refractive index of the quantum well structures by solving the linearized multiband semiconductor Bloch equations with the many-body interactions included. In our laser simulation, we typically solve the envelope equations for the laser field in space-time domain, coupled with a reduced set of material equations using the microscopic calculation of the first step. Finally I will show some examples of both aspects of simulation and modeling.
Document ID
20020054449
Acquisition Source
Ames Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Ning, Cun-Zheng
(NASA Ames Research Center Moffett Field, CA United States)
Saini, Subbash
Date Acquired
August 20, 2013
Publication Date
January 1, 1998
Subject Category
Lasers And Masers
Funding Number(s)
PROJECT: RTOP 519-40-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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