NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Ion Energy Distributions and their Relative Abundance in Inductively Coupled PlasmasStudy of kinetics of ions and neutrals produced in high density inductively coupled plasma (ICP) discharges is of great importance for achieving a high degree of plasma assisted deposition and etching. In this paper, we present the ion energy distributions (IEDs) of various ions arriving at the grounded lower electrode. The ions were energy as well as mass analyzed by a combination of electrostatic analyzer-quadrupole mass spectrometer for pure Ar and CF4/Ar mixtures. The measurements have been made at gas pressures ranging from 30 to 100 mTorr. In addition, the IEDs were measured when the wafer-supporting electrode was also rf-powered and the effect of the self-bias was observed in the energy distributions of ions. The shapes of the IEDs are discussed an related to the sheath properties and measured electrical waveforms, as a function of pressure and applied power. Relative ion intensities were obtained by integration of each ion kinetic energy distribution function over its energy range.
Document ID
20020061265
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Kim, J. S.
(Stanford Univ. Stanford, CA United States)
Rao, M. V. V. S.
(Eloret Corp. Moffett Field, CA United States)
Cappelli, M. A.
(Stanford Univ. Stanford, CA United States)
Sharma, S. P.
(NASA Ames Research Center Moffett Field, CA United States)
Arnold, James O.
Date Acquired
August 20, 2013
Publication Date
January 1, 1998
Subject Category
Plasma Physics
Meeting Information
Meeting: Gaseous Electronics Conference
Location: HI
Country: United States
Start Date: October 19, 1998
End Date: October 23, 1998
Funding Number(s)
PROJECT: RTOP 632-10-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available