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Record Details

Record 28 of 2540
Simulation of Etching Profiles Using Level Sets
Author and Affiliation:
Hwang, Helen(Thermoscience Inst., Moffett Field, CA United States)
Govindan, T. R.(NASA Ames Research Center, Moffett Field, CA United States)
Meyyappan, M.(NASA Ames Research Center, Moffett Field, CA United States)
Arnold, James O. [Technical Monitor]
Abstract: Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)
Publication Date: Jan 01, 1998
Document ID:
20020061378
(Acquired Aug 02, 2002)
Subject Category: PLASMA PHYSICS
Document Type: Preprint
Meeting Information: GEC98 Meeting of the American Physical Society; 19-22 Nov. 1998; Maui, HI; United States
Meeting Sponsor: American Physical Society; United States
Contract/Grant/Task Num: NAS2-14031; RTOP 632-10-01
Financial Sponsor: NASA Ames Research Center; Moffett Field, CA United States
Organization Source: NASA Ames Research Center; Moffett Field, CA United States
Description: 1p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: ETCHING; SUBSTRATES; ION EMISSION; MANUFACTURING; PLASMA JETS; SEMICONDUCTORS (MATERIALS); HOLES (MECHANICS); ALGORITHMS; ANGULAR DISTRIBUTION; ANISOTROPY; ASPECT RATIO; DISTRIBUTION FUNCTIONS; ION DISTRIBUTION; ISOTROPY; LOW PRESSURE
Availability Source: Other Sources
Availability Notes: Abstract Only
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