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Semiclassical Calculation of Reaction Rate Constants for Homolytical DissociationsThere is growing interest in extending organometallic chemical vapor deposition (OMCVD) to III-V materials that exhibit large thermal decomposition at their optimum growth temperature, such as indium nitride. The group III nitrides are candidate materials for light-emitting diodes and semiconductor lasers operating into the blue and ultraviolet regions. To overcome decomposition of the deposited compound, the reaction must be conducted at high pressures, which causes problems of uniformity. Microgravity may provide the venue for maintaining conditions of laminar flow under high pressure. Since the selection of optimized parameters becomes crucial when performing experiments in microgravity, efforts are presently geared to the development of computational OMCVD models that will couple the reactor fluid dynamics with its chemical kinetics. In the present study, we developed a method to calculate reaction rate constants for the homolytic dissociation of III-V compounds for modeling OMCVD. The method is validated by comparing calculations with experimental reaction rate constants.
Document ID
20020068802
Document Type
Other
Authors
Cardelino, Beatriz H. (Spelman Coll. Atlanta, GA United States)
Date Acquired
August 20, 2013
Publication Date
July 1, 2002
Publication Information
Publication: Research Reports: 2001 NASA/ASEE Summer Faculty Fellowship Program
Subject Category
Inorganic, Organic and Physical Chemistry
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle20020068792Analytic PrimaryResearch Reports: 2001 NASA/ASEE Summer Faculty Fellowship Program
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