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Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor ArrayThis paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.
Document ID
20030032267
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Marshall, Paul W.
(NASA Consultant Brookneal, VA)
Byers, Wheaton B.
(Science Applications International Corp. McLean, VA, United States)
Conger, Christopher
(Science Applications International Corp. McLean, VA, United States)
Eid, El-Sayed
(Gentex Corp. Carbondale, PA, United States)
Gee, George
(Stinger Ghaffarian Technologies, Inc. Greenbelt, MD)
Jones, Michael R.
(Orbital Sciences Corp. Greenbelt, MD, United States)
Marshall, Cheryl J.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Reed, Robert
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Pickel, Jim
(PR and T, Inc. Fallbrook, CA, United States)
Kniffin, Scott
(Orbital Sciences Corp. Greenbelt, MD, United States)
Date Acquired
August 21, 2013
Publication Date
July 19, 2002
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2002 IEEE Nuclear and Space Radiation Effects Conference (NSREC 02)
Location: Phoenix, AZ
Country: United States
Start Date: July 15, 2002
End Date: July 19, 2002
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Public Use Permitted.
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