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Ka-Band, RF MEMS Switches on CMOS Grade Silicon with a Polyimide Interface LayerFor the first time, RF MEMS switcbes on CMOS grade Si witb a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.
Document ID
20030032308
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Ponchak, George E. (NASA Glenn Research Center Cleveland, OH, United States)
Varaljay, Nicholas C. (NASA Glenn Research Center Cleveland, OH, United States)
Papapolymerou, John (Georgia Inst. of Tech. Atlanta, GA, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2003
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE MTT-S International Microwave Symposium
Location: Philadelphia, PA
Country: United States
Start Date: June 8, 2003
End Date: June 13, 2003
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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