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Improved Dielectric Properties of Heterostructured Ba2.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric DevicesIn the present work we have deposited MgO and Ba(sub 0.5)Sr(sub 0.5)TiO(sub 3)(BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and Rutherford backscattering technique and found to be highly (100) textured. The figure of merit {(C(sub0)-C(sub v)/(C(sub0-tandelta)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13-15 GHz. The high frequency figure of merit (kappa factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 deg/dB for hetero-structured film as compared to 24.65 deg /dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films.
Document ID
20030032309
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Jain, M.
(Puerto Rico Univ. San Juan, Puerto Rico)
Majumder, S. B.
(Puerto Rico Univ. San Juan, Puerto Rico)
Katiyar, R. S.
(Puerto Rico Univ. San Juan, Puerto Rico)
Bhalla, A. S.
(Pennsylvania State Univ. University Park, PA, United States)
Agrawal, D. C.
(Indian Inst. of Tech. Kanpur, India)
Kulkarni, V. N.
(Indian Inst. of Tech. Kanpur, India)
VanKeuls, F. W.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Miranda, F. A.
(NASA Glenn Research Center Cleveland, OH, United States)
Romanofsky, R. R.
(NASA Glenn Research Center Cleveland, OH, United States)
Mueller, C. H.
(Analex Corp. Cleveland, OH, United States)
Fernandez, F.
(Puerto Rico Univ. Mayaguez, Puerto Rico)
Date Acquired
August 29, 2013
Publication Date
November 26, 2002
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2002 Fall MRS Meeting
Location: Boston, MA
Country: United States
Start Date: December 2, 2002
End Date: December 6, 2002
Funding Number(s)
CONTRACT_GRANT: NSF-INT-0097018
CONTRACT_GRANT: DABT 63-98-1-002
CONTRACT_GRANT: DOD N00014-02-15/01-1067
CONTRACT_GRANT: NCC5-518
Distribution Limits
Public
Copyright
Public Use Permitted.
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