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Modeling of Carbon Nanotube Schottky Barrier Reduction for Holes in AirA model is proposed for the previously reported lower Schottky barrier for holes Phi(sub Bh) in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. We consider that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower Phi(sub Bh) after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.
Document ID
20030071152
Acquisition Source
Headquarters
Document Type
Preprint (Draft being sent to journal)
Authors
Yamada, Toshishige
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2003
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Nano-2003 Conference
Location: San Francisco, CA
Country: United States
Start Date: August 12, 2003
End Date: August 14, 2003
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: DTTS59-99-D-00437
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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