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Progress in GaAs Metamorphic HEMT Technology for Microwave Applications. High Efficiency Ka-Band MHEMT Power MMICsThis paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.
Document ID
20030113027
Acquisition Source
Headquarters
Document Type
Preprint (Draft being sent to journal)
Authors
Smith, P. M. (BAE Systems Nashua, NH, United States)
Dugas, D. (BAE Systems Nashua, NH, United States)
Chu, K. (BAE Systems Nashua, NH, United States)
Nichols, K. (BAE Systems Nashua, NH, United States)
Duh, K. H. (BAE Systems Nashua, NH, United States)
Fisher, J. (BAE Systems Nashua, NH, United States)
MtPleasant, L. (BAE Systems Nashua, NH, United States)
Xu, D. (BAE Systems Nashua, NH, United States)
Gunter, L. (BAE Systems Nashua, NH, United States)
Vera, A. (BAE Systems Nashua, NH, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2003
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE GaAs IC Symposium
Location: San Diego, CA
Country: United States
Start Date: November 10, 2003
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: DAAD19-01-C-0068
CONTRACT_GRANT: NAS3-01090
Distribution Limits
Public
Copyright
Public Use Permitted.
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