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Ge Semiconductor Devices for High-Performance Cryogenic Power ElectronicsNo abstract available
Document ID
20040016334
Acquisition Source
Headquarters
Document Type
Contractor or Grantee Report
Authors
Ward, Rufus R. (GPD Optoelectronics Corp. Salem, NH, United States)
Kirschman, Randall K. (GPD Optoelectronics Corp. Salem, NH, United States)
Date Acquired
August 21, 2013
Publication Date
January 15, 2004
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: NAS3-01050
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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