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Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and CircuitsCombining broad-beam circuit level SEU response with ion microprobe tests on single silicon germanium heterojunction bipolar transistors allows for a better understanding of the charge collection mechanisms responsible for SEU response of HBT technology.
Document ID
20040031776
Document Type
Conference Paper
Authors
Robert A Reed (Goddard Space Flight Center Greenbelt, Maryland, United States)
Paul W Marshall (Consultant Brookneal, VA, United States)
Jim Pickel (PR&T, Inc. Fallbrook, California, United States)
Martin A Carts (Raytheon (United States) Waltham, Massachusetts, United States)
Tim Irwin (Jackson and Tull (United States) Washington D.C., District of Columbia, United States)
Guofu Niu (Auburn University Auburn, Alabama, United States)
John Cressler (Georgia Institute of Technology Atlanta, Georgia, United States)
Ramkumar Krithivasan (Auburn University Auburn, Alabama, United States)
Karl Fritz (Mayo Foundation Rochester, Minnesota, United States)
Pam Riggs (Mayo Foundation Rochester, Minnesota, United States)
Date Acquired
August 21, 2013
Publication Date
July 21, 2003
Subject Category
Electronics and Electrical Engineering
Meeting Information
40th Annual IEEE Nuclear and Space Radiation Effects Conference(Monterey, CA)
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.

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