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Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide NanofibersNovel translators and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. Furthermore, the ability to form devices on flexible substrates expands the range of applications where electronic circuitry can be introduced. For NASA, nonotechndogy offers opportunities for increased onboard data processing and thus autonomous decision-making ability, ad novel sensors that detect and respond to external stimuli with few oversight requirements. The goat of this work is to demonstrate transistor behavior in polyaniline/ polyethylene oxide nanofibers, thus creating a foundation for future logic devices.
Document ID
20040046149
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Miranda, Felix A.
(NASA Glenn Research Center Cleveland, OH, United States)
Theofylaktos, Noulle
(NASA Glenn Research Center Cleveland, OH, United States)
Robinson, Daryl C.
(NASA Glenn Research Center Cleveland, OH, United States)
Mueller, Carl H.
(Analex Corp. Cleveland, OH, United States)
Pinto, Nicholas J.
(Puerto Rico Univ. Humacao, Puerto Rico)
Date Acquired
August 21, 2013
Publication Date
February 5, 2004
Subject Category
Solid-State Physics
Meeting Information
Meeting: The Northeast Ohio Nanoscience and Nanotechnology Research Symposium
Start Date: February 17, 2004
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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