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Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial PolarizationA model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.
Document ID
20040070924
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
MacLeod, Todd C.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Ho, Fat D.
(Alabama Univ. Huntsville, AL, United States)
Date Acquired
August 21, 2013
Publication Date
March 9, 2004
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 16th International Symposium on Integrated Ferroelectrics
Location: Gyeonglu
Country: Korea, Republic of
Start Date: April 8, 2004
Funding Number(s)
OTHER: 101-15-63
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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