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Silicon Carbide Diodes Performance Characterization at High TemperaturesNASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.
Document ID
20040120943
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Lebron-Velilla, Ramon C.
(NASA Glenn Research Center Cleveland, OH, United States)
Schwarze, Gene E.
(NASA Glenn Research Center Cleveland, OH, United States)
Gardner, Brent G.
(NASA Glenn Research Center Cleveland, OH, United States)
Adams, Jerry
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Date Acquired
August 22, 2013
Publication Date
January 1, 2004
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Space Power Workshop
Location: Manhattan Beach, CA
Country: United States
Start Date: April 21, 2004
Funding Number(s)
WBS: WBS 319-20-N1
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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