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Gas Sensors Using SiC Semiconductors and Method of Fabrication ThereofGas sensor devices are provided having an atomically flat silicon carbide top surface that, in turn, provides for a uniform, and reproducible surface thereof.
Document ID
20040120988
Document Type
Other - Patent
Authors
Hunter, Gary W. (NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 22, 2013
Publication Date
July 20, 2004
Subject Category
Mechanical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-LEW-17300-1|US-Patent-6,763,699
Patent Application
US-Patent-Appl-SN-359940
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