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Gas Sensors Using SiC Semiconductors and Method of Fabrication ThereofGas sensor devices are provided having an atomically flat silicon carbide top surface that, in turn, provides for a uniform, and reproducible surface thereof.
Document ID
20040120988
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
Authors
Gary W Hunter
Philip G Neudeck
Date Acquired
August 22, 2013
Publication Date
July 20, 2004
Subject Category
Mechanical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-6,763,699
Patent Application
US-Patent-Appl-SN-359940

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