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Record Details

Record 1 of 32787
Advanced Computational Modeling of Vapor Deposition in a High-pressure Reactor
Author and Affiliation:
Cardelino, Beatriz H.(Spelman Coll., Atlanta, GA, United States)
Moore, Craig E.(NASA Marshall Space Flight Center, Huntsville, AL, United States)
McCall, Sonya D.(Spelman Coll., Atlanta, GA, United States)
Cardelino, Carlos A.(Georgia Inst. of Tech., Atlanta, GA, United States)
Dietz, Nikolaus(Georgia State Univ., Atlanta, GA, United States)
Bachmann, Klaus(North Carolina State Univ., Raleigh, NC, United States)
Abstract: In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.
Publication Date: Jan 01, 2004
Document ID:
20040129585
(Acquired Oct 13, 2004)
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Preprint
Meeting Information: 2004 Conference on Advances in Internet Technologies and Applications (CAITA); 8-11 Jul. 2004; West Lafayette, IN; United States
Financial Sponsor: NASA Marshall Space Flight Center; Huntsville, AL, United States
Organization Source: NASA Marshall Space Flight Center; Huntsville, AL, United States
Description: 1p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: HIGH PRESSURE; MATHEMATICAL MODELS; VAPOR DEPOSITION; REACTORS; COMPUTERIZED SIMULATION; FLUID DYNAMICS; INDIUM; GALLIUM NITRIDES; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; LAMINAR FLOW; ELECTRO-OPTICS; SEMICONDUCTOR LASERS; MICROGRAVITY
Availability Source: Other Sources
Availability Notes: Abstract Only
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