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Active Control of Interface Shape During the Crystal Growth of Lead BromideA thermal model for predicting and designing the furnace temperature profile was developed and used for the crystal growth of lead bromide. The model gives the ampoule temperature as a function of the furnace temperature, thermal conductivity, heat transfer coefficients, and ampoule dimensions as variable parameters. Crystal interface curvature was derived from the model and it was compared with the predicted curvature for a particular furnace temperature and growth parameters. Large crystals of lead bromide were grown and it was observed that interface shape was in agreement with the shape predicted by this model.
Document ID
20050207426
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Duval, W. M. B.
(NASA Glenn Research Center Cleveland, OH, United States)
Batur, C.
(Akron Univ. Akron, OH, United States)
Singh, N. B.
(Northrop Grumman Corp. Linthicum, MD, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2003
Subject Category
Solid-State Physics
Meeting Information
Meeting: 2003 Materials Solutions Conference, Progress in Solidification and Crystal Growth Technology in the Last Century
Location: Pittsburgh, PA
Country: United States
Start Date: October 13, 2003
End Date: October 16, 2003
Funding Number(s)
CONTRACT_GRANT: NAG3-2442
Distribution Limits
Public
Copyright
Other

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