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Impurity Studies of Cd(0.8)Zn(0.2)Te Crystals Using Photoluminescence and Glow Discharge Mass SpectroscopyCd(1-x)Zn(x)Te semiconductor crystal is a highly promising material for room temperature x- and gamma-ray detector applications because of its high resistivity, long carrier lifetime, and relatively high hole and electron mobilities. This paper reports the investigation of the impurities in several Cd(1-x)Zn(x)Te (x = 0.20) crystals grown using the vertical Bridgman method under a Cd overpressure. The impurity concentrations were measured using glow discharge mass spectroscopy (GDMS). The energy states of the impurities were studied using photoluminescence (PL) spectroscopy at liquid helium temperature. The PL spectra showed a series of sharp high energy lines which are associated with free excitons and excitons bound to impurities as donors and acceptors in the crystals. The impurities also contributed to donor-acceptor pair recombination. The correlation between the GDMS and PL results will be reported.
Document ID
20050207490
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Su, Ching-Hua
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Lehoczky, Sandor L.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Scripa, Rosalie N.
(Alabama Univ. Birmingham, AL, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2005
Subject Category
Space Radiation
Meeting Information
Meeting: 16th American Conference on Crystal Growth and Epitaxy (ACCGB)
Location: Big Sky Resort, MT
Country: United States
Start Date: July 10, 2005
End Date: July 15, 2005
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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