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Thermophysical and Optical Properties of Semiconducting Ga2Te3 MeltThe majority of bulk semiconductor single crystals are presently grown from their melts. The thermophysical and optical properties of the melts provide a fundamental understanding of the melt structure and can be used to optimize the growth conditions to obtain higher quality crystals. In this paper, we report several thermophysical and optical properties for Ga2Te3 melts, such as electrical conductivity, viscosity, and optical transmission for temperatures ranging from the melting point up to approximately 990 C. The conductivity and viscosity of the melts are determined using the transient torque technique. The optical transmission of the melts is measured between the wavelengths of 300 and 2000 nm by an dual beam reversed-optics spectrophotometer. The measured properties are in good agreement with the published data. The conductivities indicate that the Ga2Te3 melt is semiconductor-like. The anomalous behavior in the measured properties are used as an indication of a structural transformation in the Ga2Te3 melt and discussed in terms of Eyring's and Bachinskii's predicted behaviors for homogeneous melts.
Document ID
20050207494
Document Type
Conference Paper
Authors
Li, Chao (NASA Marshall Space Flight Center Huntsville, AL, United States)
Su, Ching-Hua (NASA Marshall Space Flight Center Huntsville, AL, United States)
Lehoczky, Sandor L. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Scripa, Rosalie N. (Alabama Univ. Birmingham, AL, United States)
Ban, Heng (Alabama Univ. Birmingham, AL, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2005
Subject Category
Mechanical Engineering
Meeting Information
16th American Conference on Crystal Growth and Epitaxy (ACCGE)(Big Sky Resort, MT)
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.