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Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar WaveguideKa-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.
Document ID
Document Type
Conference Paper
Scardelletti, Maximilian C. (NASA Glenn Research Center Cleveland, OH, United States)
Ponchak, George E. (NASA Glenn Research Center Cleveland, OH, United States)
Varaljay, Nicholas C. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2005
Subject Category
Electronics and Electrical Engineering
Distribution Limits
Work of the US Gov. Public Use Permitted.