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Characteristics Of Ferroelectric Logic Gates Using a Spice-Based ModelA SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.
Document ID
20050215632
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
MacLeod, Todd C.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Phillips, Thomas A.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Ho, Fat D.
(Alabama Univ. Huntsville, AL, United States)
Date Acquired
August 23, 2013
Publication Date
June 15, 2005
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: International Meeting on Ferroelectricity
Location: Foz do Iguacu
Country: Brazil
Start Date: September 5, 2005
End Date: September 9, 2005
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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