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Fabrication and Probabilistic Fracture Strength Prediction of High-Aspect-Ratio Single Crystal Silicon Carbide Microspecimens With Stress ConcentrationSingle crystal silicon carbide micro-sized tensile specimens were fabricated with deep reactive ion etching (DRIE) in order to investigate the effect of stress concentration on the room-temperature fracture strength. The fracture strength was defined as the level of stress at the highest stressed location in the structure at the instant of specimen rupture. Specimens with an elliptical hole, a circular hole, and without a hole (and hence with no stress concentration) were made. The average fracture strength of specimens with a higher stress concentration was larger than the average fracture strength of specimens with a lower stress concentration. Average strength of elliptical-hole, circular-hole, and without-hole specimens was 1.53, 1.26, and 0.66 GPa, respectively. Significant scatter in strength was observed with the Weibull modulus ranging between 2 and 6. No fractographic examination was performed but it was assumed that the strength controlling flaws originated from etching grooves along the specimen side-walls. The increase of observed fracture strength with increasing stress concentration was compared to predictions made with the Weibull stress-integral formulation by using the NASA CARES/Life code. In the analysis isotropic material and fracture behavior was assumed - hence it was not a completely rigorous analysis. However, even with these assumptions good correlation was achieved for the circular-hole specimen data when using the specimen data without stress concentration as a baseline. Strength was over predicted for the elliptical-hole specimen data. Significant specimen-to-specimen dimensional variation existed in the elliptical-hole specimens due to variations in the nickel mask used in the etching. To simulate the additional effect of the dimensional variability on the probabilistic strength response for the single crystal specimens the ANSYS Probabilistic Design System (PDS) was used with CARES/Life.
Document ID
20060004809
Acquisition Source
Glenn Research Center
Document Type
Technical Memorandum (TM)
Authors
Nemeth, Noel N.
(NASA Glenn Research Center Cleveland, OH, United States)
Evans, Laura J.
(NASA Glenn Research Center Cleveland, OH, United States)
Jadaan, Osama M.
(Wisconsin Univ. Platteville, WI, United States)
Sharpe, William N., Jr.
(Johns Hopkins Univ. Baltimore, MD, United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH, United States)
Trapp, Mark A.
(Carnegie-Mellon Univ. Pittsburgh, PA, United States)
Date Acquired
September 7, 2013
Publication Date
December 1, 2005
Subject Category
Solid-State Physics
Report/Patent Number
E-15309
NASA/TM-2005-213986
Report Number: E-15309
Report Number: NASA/TM-2005-213986
Funding Number(s)
WBS: WBS 22-066-30-03
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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