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Transferred substrate heterojunction bipolar transistors for submillimeter wave applicationsWe present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
Document ID
20060029091
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Fung, A.
Samoska, L.
Siegel, P.
Rodwell, M.
Urteaga, M.
Paidi, V.
Date Acquired
August 23, 2013
Publication Date
April 22, 2003
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
heterojunction bipolar transistor InP submillimeter

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