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Record 35 of 2427
Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots
External Online Source: hdl:2014/9459
Author and Affiliation:
Leon, R.
Marcinkevicius, S.
Siegert, J.
Magness, B.
Taylor, W.
Lobo, C.
Abstract: The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
Publication Date: Jul 05, 2002
Document ID:
20060029833
(Acquired Sep 14, 2006)
Document Type: Journal Article
Publication Information: IEEE Transactions on Nuclear Science
Financial Sponsor: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: ALUMINUM GALLIUM ARSENIDES; AUGMENTATION; CONFINEMENT; DEFECTS; DIODES; DOSAGE; GALLIUM ARSENIDES; INDIUM ALUMINUM ARSENIDES; INDIUM GALLIUM ARSENIDES; LUMINESCENCE; NANOTECHNOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PROTON IRRADIATION; PROTONS; QUANTUM DOTS; QUANTUM WELLS; RADIATION TOLERANCE; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; SUBSTRATES; TRENDS; WETTING
Other Descriptors: NANOTECHNOLOGY DLTS OPTICAL PROPERTIES PN DIODES QUANTUM DOTS
Availability Source: Other Sources
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