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The four-gate transistorThe four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.
Document ID
20060029993
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Mojarradi, M. M.
Cristoveanu, S.
Allibert, F.
France, G.
Blalock, B.
Durfrene, B.
Date Acquired
August 23, 2013
Publication Date
September 23, 2002
Distribution Limits
Public
Copyright
Other
Keywords
neuro-prosthetic devices cortical signals

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