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Improved dot size uniformity and luminescense of InAs quantum dots on InP substrateInAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
Document ID
20060030469
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Qiu, Y.
Uhl, D.
Date Acquired
August 23, 2013
Publication Date
November 25, 2002
Distribution Limits
Public
Copyright
Other
Keywords
InAs quantum dot

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