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Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dotsThe photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
Document ID
20060032602
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/14253
Authors
Leon, R.
Swift, G. M.
Magness, B.
Taylor, W. A.
Tang, Y. S.
Wang, K. L.
Dowd, P.
Zhang, Y. H.
Date Acquired
August 23, 2013
Publication Date
April 10, 2000
Publication Information
Publication: Applied Physics Letters
Volume: 76
Issue: 15
Subject Category
Physics (General)
Distribution Limits
Public
Copyright
Other
Keywords
Radiation recombination heterostructures transformation

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