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Quantum Well Infrared Photodetectors for low background applicationQWIPs operate by photoexcitation of electrons between ground and first excited state subbands of multi-quantum wells (MQWs) which are artificially fabricated by placing thin layers of two dfferent, high-bandgap semiconductor materials alternately. The bandgap discontinuity of two materials creates quantized subbands in the potential wells associated with conduction bands.
Document ID
20060033189
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Bandara, S. V.
Gunapala, S. D.
Rafol, B.
Liu, J. K.
Ting, D. Z.
Mumolo, J. M.
Date Acquired
August 23, 2013
Publication Date
July 18, 2000
Distribution Limits
Public
Copyright
Other
Keywords
infrared focal plane arrays quantum wells

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