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Tunable Intersublevel Transitions in Self-forming Semiconductor Quantum DotsInterfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).
Document ID
20060034776
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/20368
Authors
Leon, R.
Fafard, S.
Piva, P.
Ruvimov, S.
Liliental-Weber, Z.
Date Acquired
August 23, 2013
Publication Date
August 6, 1998
Publication Information
Publication: Physical Review B-Rapid Communication
Subject Category
Communications And Radar
Distribution Limits
Public
Copyright
Other
Keywords
Semiconductor Tunable Intersublevel Transitions
Interfacial compositional disordering quantom dots photoluminescence

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