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A Chemical and Structural Study of the A1N-Si InterfaceSamples of A1N grown on silicon [111] subtrates were examined using electron enery loss spectroscopy (EELS) and selected area diffraction (SAD) with high-resolution transmission electron microscopy (TEM) to determine the source of out-of-place tilts and in-plane rotations of the A1N crystallites at the Si interface.
Document ID
20060035202
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/22095
Authors
George, T.
Beye, R.
Date Acquired
August 23, 2013
Publication Date
March 31, 1997
Distribution Limits
Public
Copyright
Other
Keywords
silicon out-of-plane tilts in-plane rotations silicon nitride

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