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Fabrication and Characterization of 640x486 GaAs Based Quantum Well Infrared Photodetector (QWIP) Snapshot CameraIn this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NE(delta)T, uniformity, and operability.
Document ID
20060035439
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/22458
Authors
Gunapala, S. D.
Bandara, S. V.
Liu, J. K.
Hong, W.
Sundaram, M.
Carralejo, R.
Shott, C. A.
Maker, P. D.
Miller, R. E.
Date Acquired
August 23, 2013
Publication Date
August 31, 1997
Distribution Limits
Public
Copyright
Other
Keywords
Intersubband Transitions Infrared (IR) Long-wavelength Infrared (LWIR) Gallium
Noise Equivalent Temperature Difference Infrared Imaging Cameras
Arsenide (GaAs) Quantum Well Infrared Photodectector (QWIP) Focal Plane Arrays

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