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A Chemical and Structural Study of the AlN-Si InterfaceThe growth of low defect density heteroepitaxial AlN has great implications for optoelectronic and high power devices since the AlN can be used either as device material or as a buffer layer for the overgrowth of other group-III nitrides. In this work, the results of transmission electron microscopy (TEM) involving both high resolution imaging and electron energy loss spectroscopy (EELS) of AlN/Si layers is reported and the relationship between Si-Al-N interactions and the misorientation of AlN nuclei is elucidated.
Document ID
20060036817
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Beye, R.
George, T.
Yang, J. W.
Khan, M. A.
Date Acquired
August 23, 2013
Publication Date
March 31, 1997
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
epitaxial optoelectronic silicon gallium nitride

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