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Fluorine Implantation and Residual Stresses in Polysilicon FilmsAs microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon.
Document ID
20060038151
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Lowery, Lynn
Zschack, Paul
Angelis, Robert De
Date Acquired
August 23, 2013
Publication Date
August 5, 1994
Distribution Limits
Public
Copyright
Other
Keywords
polysilicon fluorine microelectronic devices hot carrier effect scaling VLSI
stress relaxation

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