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Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital ConvertersAnalog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.
Document ID
20060038896
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Lee, C. I.
Rax, B. G.
Johnston, A. H.
Date Acquired
August 23, 2013
Publication Date
January 1, 1993
Publication Information
Publication: IEEE Transactions on Nuclear Science: IEEE Nuclear and Space Radiation Effects Conference
Subject Category
Space Radiation
Distribution Limits
Public
Copyright
Other

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