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Noise and Electrical Characteristics below 10 K of small CHFET Circuits and Discrete DevicesThis paper discusses the lates results of a continuing study of the properties of the complementary heterojunction field-effect transistor (CHFET) at 4K. The electrical characteristics, including the gate leakage current and the subthreshold transconductance, and the input-referred noise voltage for a new lot of discrete CHFETs is presented and discussed.
Document ID
20060038985
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Cunningham, Thomas J.
Gee, Russell
Fossum, Eric R.
Baier, Steven M.
Date Acquired
August 23, 2013
Publication Date
April 16, 1993
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
Complementary Heterojunction Field-effect Transistor (CHFET)

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