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Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect TransistorThis paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.
Document ID
20060039179
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/35608
Authors
Cunningham, Thomas J.
Gee, Russell C.
Fossum, Eric R.
Baier, Steven M.
Date Acquired
August 23, 2013
Publication Date
July 21, 1993
Distribution Limits
Public
Copyright
Other
Keywords
electrical properties transistors

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