16 Micrometer Infrared Hot Electron Transistor

We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K.