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Latchup in CMOS analog-to-digital convertersHeavy-ion latchup is investigated for analog-to-digital converters. Differences in cross section for various ions shows that charge is collected at depths beyond 50 um, causing the cross section to be underestimated unless long-range ions are used. Current distributions and thermal imaging were used to identify latchup-sensitive regions. Latchup in one of the circuittypes was catastrophic, even when the power was turned off within 10 ms of a latchup event.
Document ID
20060039828
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Miyahira, T.
Johnston, A.
Date Acquired
August 23, 2013
Publication Date
July 17, 2001
Subject Category
Space Radiation
Distribution Limits
Public
Copyright
Other
Keywords
latchup space radiation CMOS analog-to-digital converter

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