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Inadvertently programmed bits in Samsung 128 Mbit flash devices: a flaky investigationJPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.
Document ID
20060039890
Document Type
Conference Paper
External Source(s)
Authors
Swift, G.
Date Acquired
August 23, 2013
Publication Date
November 4, 2002
Distribution Limits
Public
Copyright
Other
Keywords
flash memory program disturb wearout erase fail reliability