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SEE and TID extension testing of the Xilinx XQR18V04 4Mbit radiation hardened configuration PROMThe XQR18V04 was evaluated for single event upset rates using proton and heavy ions. The PROM was demonstrated to be immune to latch-up, as well as to static upset in the flash memory cells, to an LET > 125 MeV/mg/cmz (effective). The PROM was also tested in a dynamic mode, which revealed three distinct error modes: Read Bit Errors, Address Errors, and a Single Event Functional Interrupt (SEW which affected the data output drivers. Saturation cross-sections, and onset thresholds, for these errorinodes were measured at the heavy ion facility at Texas A&M University, and the proton facility at UC Davis. Additional testing was performed at UC Davis and the Cobalt 60 source at McClellan Air Force Base to examine the effect to TID life as a function of power biasing. The PROM demonstrated a 100% improvement in total TID life with an 84% percent decrease in device usage.
Document ID
20060040256
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Yui, C.
Swift, G.
Fabula, J.
Carmichael, C.
Date Acquired
August 23, 2013
Publication Date
September 10, 2002
Publication Information
Publication: 2002 MAPLD International Conference Proceedings
Distribution Limits
Public
Copyright
Other
Keywords
FPGA Virtex II SEU

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