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Characteristics of Monolithically Integrated InGaAs Active Pixel Image ArraySwitching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.
Document ID
20060040544
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Kim, Q.
Cunningham, T. J.
Pain, B.
Lange, M. J.
Olsen, G. H.
Date Acquired
August 23, 2013
Publication Date
January 28, 1999
Distribution Limits
Public
Copyright
Other
Keywords
Active Pixel Imager Dual (Visible/IR) responses Active pixel sensor InP imaging
detector InGaAs APS

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