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8-9 and 14-15 meu Two-Color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array CameraAn optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
Document ID
20060040668
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/17358
Authors
Guanapala, S.
Bandara, S.
Singh, A.
Liu, J.
Rafol, S.
Luong, E.
Mumolo, J.
Tran, N.
Vincent, J.
Shott, C.
Long, J.
LeVan, P.
Date Acquired
August 23, 2013
Publication Date
April 5, 1999
Publication Information
Publication: SPIE Proceedings
Distribution Limits
Public
Copyright
Other
Keywords
Quantum Well Infrarted Photodetector QWIP

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